Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
www.datasheet4u.com
IXFC 36N50P IXFR 36N50P
VDSS ID25
...
Advance Technical Information
PolarHVTM HiPerFET Power
MOSFET
www.datasheet4u.com
IXFC 36N50P IXFR 36N50P
VDSS ID25
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
= = RDS(on) ≤ ≤ trr
500 18 190 250
V A mΩ ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 18 100 24 50 1.5 20 156 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
ISOPLUS220 (IXFC) E153432
G
D
S
Isolated back surface*
ISOPLUS247 (IXFR) E153432
G
W °C °C °C °C V~ N/lb g g
D
S
Isolated back surface
D = Drain
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting Force (IXFR) (IXFC) (IXFR) (IXFC)
300 2500 11..65 / 2.5..15 20..120 / 4.5..25N/lb 3 5
Features z International standard isolated packages z UL recognized packages
z
Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT TJ = 125°C
Characteristic Values Min. Typ. Max. 500 2.5 5.0 ± 100 25 250 190 V V nA μA μA mΩ
z
z
z
Silicon chip on Direct-Copper-Bond substrate - High power dissipation...