IXFN73N30Q

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFN 73N30Q VDSS ID25 RDS(on) = 300 V = 73 A = 42 mΩ trr ≤ 250 ns Maximum Ratings 300 300 ±20 ±30 73 292 73 60 2.5 5 500 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.5/13 30 V V miniBLOC, SOT-227 B (IXFN) E153432 S G V V A A A mJ J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive -faster switching Unclamped Inductive Switching (UIS) rated Low RDS (on) Fast intrinsic diode International standard package miniBLOC with Aluminium nitride isolation for low thermal resistance Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) Molding epoxies meet UL 94 V-0 flammability classification Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages Easy to mount Space savings High power density G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Ke...