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HiPerFETTM Power MOSFET
Single Die MOSFET
Preliminary data sheet Symbol Test Conditions
VDSS
ID25 55A 50A 55A 50A
RDS(on) 80mΩ 100mΩ 80mΩ 100mΩ
trr 250ns 250ns 250ns 250ns
IXFN IXFN IXFK IXFK
55N50 50N50 55N50 50N50
500V 500V 500V 500V
IXFK 55N50 500 500 ± 20 ± 30 55 220 55 60 5 560
Maximum Ratings IXFK IXFN 50N50 55N50 500 500 ± 20 ± 30 50 200 50 55 220 55 60 5 600 -55 ... +150 150 -55 ... +150
TO-264 AA (IXFK) IXFN 50N50 V V V V 50 A 200 A 50 A mJ V/ns
D S G D S
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Power MOSFET
www.DataSheet4U.com
HiPerFETTM Power MOSFET
Single Die MOSFET
Preliminary data sheet Symbol Test Conditions
VDSS
ID25 55A 50A 55A 50A
RDS(on) 80mΩ 100mΩ 80mΩ 100mΩ
trr 250ns 250ns 250ns 250ns
IXFN IXFN IXFK IXFK
55N50 50N50 55N50 50N50
500V 500V 500V 500V
IXFK 55N50 500 500 ± 20 ± 30 55 220 55 60 5 560
Maximum Ratings IXFK IXFN 50N50 55N50 500 500 ± 20 ± 30 50 200 50 55 220 55 60 5 600 -55 ... +150 150 -55 ... +150
TO-264 AA (IXFK) IXFN 50N50 V V V V 50 A 200 A 50 A mJ V/ns
D S G D S
VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C T C =25 ° C, TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
D (TAB)
miniBLOC, SOT-227 B (IXFN) E153432 S
G
W °C °C °C °C V~ V~ G = Gate S = Source D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
300 N/A N/A 0.9/6 N/A 10
N/A 2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20V; VDS = 0V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1
Characteristic Values Min. Typ. Max.
500 2.5 4.5 ± 200 TJ = 25°C TJ = 125°C 55N50 50N50 25 2 80 100 V V nA µA mA mΩ mΩ
Features • International st.