IXFN48N50

TM www.DataSheet4U.com HiPerFET Power MOSFETs VDSS IXFK / IXFN 44 N50 IXFK / IXFN 48 N50 ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 44 A 0.12 Ω 500 V 48 A 0.10 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 44N50 48N50 44N50 48N50 Maximum Ratings IXFK IXFN 500 500 ±20 ±30 44 48 176 192 24 30 5 500 500 500 ±20 ±30 44 48 176 192 24 30 5 520 150 -55 ... +150 V V TO-264 AA (IXFK) G V V A A A A A mJ V/ns S G D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S D G S S D W °C °C °C °C V~ V~ G = Gate S = Source D = Drain TAB = Drain -55 ... +150 Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±200 TJ = 25°C TJ = 125°C 400 2 0.12 0.10 V V nA µA mA Ω Ω Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOSTM process Unclamped I...