IXFN340N07

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFN 340N07 D VDSS ID25 RDS(on) = 70 V = 340 A = 4 mW G S trr £ 250ns S Maximum Ratings 70 70 ± 20 ± 30 340 100 1360 200 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 4 V V nA mA mA mW VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC,...