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IXFN23N100 Datasheet

Part Number IXFN23N100
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET
Datasheet IXFN23N100 DatasheetIXFN23N100 Datasheet (PDF)

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -.

  IXFN23N100   IXFN23N100






(IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -55 ... +150 150 -55 ... +150 V V V V A A A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight S D G = Gate S = Source D = Drain báíÜÉê=pçìêÅÉ=íÉêãáå~ä=~í=ãáåá_il`=Å~å=ÄÉ=ìëÉÇ ~ë=j~áå=çê=hÉäîáå=pçìêÅÉ 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage.


2008-06-20 : 8F32256C    EDI8F16256C    EDI8F321024C    EDI8F32128C    EDI8F32256C    EDI8F32259C    EDI8F32259V    EDI8F32512C    EDI8F32512V    EDI8F81024C   


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