DatasheetsPDF.com

IXFK120N20 Datasheet

Part Number IXFK120N20
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs
Datasheet IXFK120N20 DatasheetIXFK120N20 Datasheet (PDF)

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 200 200 ±20 ±30 120 76 480 120 64 3 5.

  IXFK120N20   IXFK120N20






Part Number IXFK120N25P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFK120N20 DatasheetIXFK120N25P Datasheet (PDF)

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS(on) = trr < www.DataSheet4U.com 250 V 120 A 24 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, .

  IXFK120N20   IXFK120N20







Part Number IXFK120N25
Manufacturers IXYS
Logo IXYS
Description HiPerFET Power MOSFETs
Datasheet IXFK120N20 DatasheetIXFK120N25 Datasheet (PDF)

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 250 250 ±.

  IXFK120N20   IXFK120N20







Part Number IXFK120N20P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description PolarHT HiPerFET Power MOSFET
Datasheet IXFK120N20 DatasheetIXFK120N20P Datasheet (PDF)

Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 140 ns trr www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 2.

  IXFK120N20   IXFK120N20







HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 200 200 ±20 ±30 120 76 480 120 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 300 0.9/6 Nm/lb.in. 6 10 g g Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1 Applications • DC-DC converters • Battery chargers • Switc.


2005-04-05 : D8237A    D8237A    K9K1G08U0B    KS88C0916    KS88C2064    KS88C2148    KS88C2416    KS88C2432    KS88C4404    KS88C4504   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)