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IXFK110N06 Datasheet

Part Number IXFK110N06
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs
Datasheet IXFK110N06 DatasheetIXFK110N06 Datasheet (PDF)

www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limit.

  IXFK110N06   IXFK110N06






Part Number IXFK110N07
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs
Datasheet IXFK110N06 DatasheetIXFK110N07 Datasheet (PDF)

www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limit.

  IXFK110N06   IXFK110N06







HiPerFET Power MOSFETs

www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C N07 N06 N07 N06 Maximum Ratings 70 60 70 60 ±20 ±30 110 76 600 100 30 2 5 500 -55 ... +150 150 -55 ... +150 V V V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. Nm/lb.in. g TO-264 AA (IXFK) G D S (TAB) Features • International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 92802I (10/97) 1.6 mm (0.063 in) from case for 10 s Mounting torque Terminal connection torque 300 0.9/6 10 Symbol Test Conditions Ch.


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