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IXFH58N20Q

Part Number	IXFH58N20Q
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs
Features	l l l 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) ...
Published	Apr 23, 2008
Datasheet	IXFH58N20Q PDF File

Features

l l l

1.13/10 Nm/lb.in.

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C

Characteristic Value...

Similar Datasheet

IXFH58N20
HiPerFET Power MOSFETs
(IXYS Corporation)

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