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IXDR30N120D1

Part Number	IXDR30N120D1
Manufacturer	IXYS
Description	High Voltage IGBT
Published	Oct 31, 2015
Detailed Description	High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability ...
Datasheet	IXDR30N120D1 PDF File

Overview

High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA G C E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.
4 V C G E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside* G = Gate C = Collector E = Emitter Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight Symbol V(BR)CES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 47 Ω Clamped inductive load, L = 30 mH VGE = ±15 V, VCE = VCES, TJ = 125°C ...

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