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IXDH35N60BD1

Part Number	IXDH35N60BD1
Manufacturer	IXYS Corporation
Description	IGBT with optional Diode
Published	Apr 5, 2005
Detailed Description	IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N...
Datasheet	IXDH35N60BD1 PDF File

Overview

IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.
1 V C G G C TO-247 AD IXDH .
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E IXDH 35N60 B IXDP 35N60 B E IXDH 35N60 BD1 G C E C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 600 600 ±20 ±30 60 35 70 ICM = 110 VCEK < VCES 10 250 80 -55 .
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+150 -55 .
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+150 300 0.
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