IXDD415SI
Dual 15 Ampere Low-Side Ultrafast MOSFET Driver
Features
• Built using the advantages and compatibility of CM...
IXDD415SI
Dual 15 Ampere Low-Side Ultrafast
MOSFET Driver
Features
Built using the advantages and compatibility of
CMOS and IXYS HDMOSTM processes Latch-Up Protected High Peak Output Current: Dual 15A Peak Wide Operating Range: 8V to 30V Rise And Fall Times of <3ns Minimum Pulse Width Of 6ns Ability to Disable Output under Faults High Capacitive Load Drive Capability: 4nF in <5ns Matched Rise And Fall Times 32ns Input To Output Delay Time Low Output Impedance Low Supply Current
General Description
The IXDD415 is a dual
CMOS high speed high current gate driver specifically designed to drive
MOSFETs in Class D and E HF RF applications, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. Each output of the IXDD415 can source and sink 15A of peak current while producing
voltage rise and fall times of less than 3ns. The outputs of the IXDD415 may be paralleled, producing a single output of up to 30A with comparable rise and fall times. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in the IXDD415. Its features and wide safety margin in operating
voltage and power make the IXDD415 unmatched in performance and value. The IXDD415 has two enable inputs, ENA and ENB. These enable inputs can be used to independently disable either of the outpu...