IXBH42N170A

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=p1e2ti0tiv0eV, TJ = 125°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 42 A 21 A 265 A ICM = 84 1360 A V 10 357 -55 ... +150 150 -55 ... +150 300 260 1.13/10 4 6 µs W °C °C °C °C °C Nm/lb.in. g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250µA, VGE = 0V VGE(th) IC = 750µA, VCE = VGE ICES VCE = 0.8 VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC90, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 2.5 5.5 V V TJ = 125°C 50 µA 1.5 mA ±100 nA 5.2 6.0 V TJ = 125°C 5.3 V TO-268 (IXBT) G E C (Tab) TO-247 (IXBH) GCE C (Tab) G = Gate E = Emiiter C = Collector Tab = Collector Features z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Sup...