Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT...
Advanced Technical Information
High
Voltage, High Gain
BI
MOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT 16N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 16 A = 6.0 V = 50 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33 W non repetitive TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 16 10 40 ICM = VCES = 40 1350 10 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V ms W °C °C °C °C °C g g
TO-268 (IXBT)
G E
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features Monolithic fast reverse diode High Blocking
Voltage JEDEC TO-268 surface mount and JEDEC TO-247 AD packages Low switching losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268
1.13/10 Nm/lb.in. 6 4
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 125°C V V mA mA nA V V
Applications AC motor speed control Uninterruptible power supplies (UPS) ...