IX2113

INTEGRATED CIRCUITS DIVISION IX2113 600V High and Low Side Gate Driver Driver Characteristics Parameter Rating VOFFSET IO +/- (Source/Sink) VOUT ton/toff Delay Matching (Max) 600 2/2 10-20 113/100 20 Units V A V ns ns Features Floating Channel for Bootstrap Operation to +600V with Absolute Maximum Rating of +700V Outputs Capable of Sourcing and Sinking 2A Gate Drive Supply Range From 10V to 20V Enhanced Robustness due to SOI Process Tolerant to Negative Voltage Transients: dV/dt Immune 3.3V Logic Compatible Undervoltage Lockout for Both High-side and Low-Side Outputs Matched Propagation Delays IX2113 Functional Block Diagram Description The IX2113 is a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +600V. The IX2113 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 600V from the common reference. Manufactured on IXYS Integrated Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on insulator) process, the IX2113 is extremely robust, and is virtually immune to negative transients. The UVLO circuit prevents the turn-on of the MOSFET or IGBT until there is sufficient VBS or VCC supply voltage. Propagation delays are matched for use in high frequency applications. The IX2113 is available in a 14-pin DIP package and in a 16-pin SOIC package. Or...