ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
August 2018
ISL9R860P2, ISL9R860S3ST
8 A, 600 V, STEALTH™ Diode
Features
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ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
August 2018
ISL9R860P2, ISL9R860S3ST
8 A, 600 V, STEALTH™ Diode
Features
Stealth Recovery trr = 28 ns (@ IF = 8 A) Max Forward
Voltage, VF = 2.4 V (@ TC = 25°C) 600 V Reverse
Voltage and High Reliability Avalanche Energy Rated RoHS Compliant
Applications
SMPS FWD Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
Snubber Diode
Package
JEDEC TO-220AC-2L
CATHODE (FLANGE)
ANODE CATHODE
Description
The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
JEDEC TO-263AB(D2-PAK)
CATHODE (FLANGE)
Symbol
K
N/C ANODE
A
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM VRWM
VR IF(AV) IFRM IFSM
PD EAVL TJ, TSTG
TL TPKG
Parameter Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking Volt...