ISL9N312AD3

ISL9N312AD3 / ISL9N312AD3ST June 2002 ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.010Ω (Typ), VGS = 10V rDS(ON) = 0.017Ω (Typ), VGS = 4.5V Qg (Typ) = 13nC, VGS = 5V Qgd (Typ) = 4.5nC CISS (Typ) = 1450pF Applications DC/DC converters D D G S G D-PAK TO-252 (TO-252) I-PAK (TO-251AA) G D S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 50 32 11 Figure 4 75 0.5 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2 100 52 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking N312AD N312AD Device ISL9N312AD3ST ISL9N312AD3 Package TO-252A...