N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m
Description
ISL9N306AD3 / ISL9N306AD3ST
June 2003
ISL9N306AD3 / ISL9N306AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the ov...
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