ISL9N2357D3ST

ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET® Trench Power MOSFET UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching and low gate charge. The reduced conduction and switching losses extend battery life in notebook PCs, cellular telephones and other portable information appliances and improve the overall efficiency of high frequency DC-DC converters used to power the latest microprocessors. UltraFET® Trench Features rDS(ON) = 0.006Ω Typical, VGS = 10V Qg Total 85nC Typical, VGS = 10V Qgd 16nC Typical CISS 5600pF Typical Packaging ISL9N2357D3ST JEDEC TO-252AA DRAIN (FLANGE) Symbol D G GATE SOURCE S Ordering Information PART NUMBER ISL9N2357D3ST PACKAGE TO-252AA BRAND N2357D NOTE: When ordering, use the entire part number. e.g., ISL9N2357D3ST. Absolute Maximum Ratings SYMBOL VDSS VDGR VGS ID ID IDM PD TJ, TSTG TL Tpkg RθJC RθJA NOTE: 1. TJ = 25oC to 150oC. TC = 25oC, Unless Otherwise Specified PARAMETER ISL9N2357D3ST 30 30 ±20 35 35 Figure 4 100 0.67 -55 to 175 300 260 UNITS V V V A A A W W/oC oC oC oC Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20kΩ) (Note 1) Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) Continuous (TC = 100oC, VGS = 10V) Pulsed Drain Current Power Dissipation Derate Above 25oC Operating and Storage Temperature Maximum Temperature for Soldering Le...