ISB35000 SERIES
HCMOS STRUCTURED ARRAY
PRELIMINARY DATA
FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O funct...
