IS63LV1024

IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MAY 2012 FEATURES High-speed access times: 8, 10, 12 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply Packages available: – 32-pin 300-mil SOJ – 32-pin 400-mil SOJ – 32-pin TSOP (Type II) – 32-pin STSOP (Type I) – 36-pin BGA (8mmx10mm) Lead-free Available DESCRIPTION The ISSI IS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS63LV1024/IS63LV1024L operates from a single 3.3V power supply and all inputs are TTL-compatible. FUNCTIONAL BLOCK DIAGRAM A0-A16 VDD GND I/O0-I/O7 DECODER 128K X 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specificat...