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IS62LV256 Datasheet

Part Number IS62LV256
Manufacturers Integrated Silicon Solution Inc
Logo Integrated Silicon Solution  Inc
Description 32K x 8 LOW VOLTAGE STATIC RAM
Datasheet IS62LV256 DatasheetIS62LV256 Datasheet (PDF)

IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM ISSI DESCRIPTION ® DECEMBER 2002 FEATURES • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS double-metal technology. When CE is HIGH (deselected), the device .

  IS62LV256   IS62LV256






Part Number IS62LV256AL
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description 32K x 8 LOW VOLTAGE CMOS STATIC RAM
Datasheet IS62LV256 DatasheetIS62LV256AL Datasheet (PDF)

IS65LV256AL IS62LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW (typical) CMOS standby — 50 mW (typical) operating www.DataSheet4U.com • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three-state outputs • Industrial and Automotive temperatures available • Lead-free available ISSI MARCH 2006 ® DESCRIPTIO.

  IS62LV256   IS62LV256







32K x 8 LOW VOLTAGE STATIC RAM

IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM ISSI DESCRIPTION ® DECEMBER 2002 FEATURES • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS double-metal technology. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 10 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62LV256 is pin compatible with other 32K x 8 SRAMs in 300-mil SOJ, 330-mil plastic SOP, and TSOP (Type I Normal and Reverse Bent) packages. FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 256 X 1024 MEMORY ARRAY VCC GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying.


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