IS61LV2568L
256K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• • • • • • • • • High-speed access time: 8, 10 ns Operating Cu...
IS61LV2568L
256K x 8 HIGH-SPEED
CMOS STATIC RAM
FEATURES
High-speed access time: 8, 10 ns Operating Current: 50mA (typ.) Standby Current: 700µA (typ.) Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down TTL compatible inputs and outputs Single 3.3V power supply Packages available: – 36-pin 400-mil SOJ – 44-pin TSOP (Type II) Lead-free available
ISSI
JULY 2005
®
DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power,
262,144-word by 8-bit
CMOS static RAM. The IS61LV2568L is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with
CMOS input levels. The IS61LV2568L operates from a single 3.3V power supply and all inputs are TTL-compatible. The IS61LV2568L is available in 36-pin 400-mil SOJ and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K X 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this speci fication and its products at any time without notice. ISSI assumes no liability arising out of the application or us...
