16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100H IS45S16100H
® Long-term Support World Class Quality
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMI...
Description
IS42S16100H IS45S16100H
® Long-term Support World Class Quality
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
JULY 2023
FEATURES
Clock frequency: 200, 166, 143 MHz Fully synchronous; all signals referenced to a
positive clock edge Two banks can be operated simultaneously and
independently Dual internal bank controlled by A11 (bank select) Single 3.3V power supply LVTTL interface Programmable burst length
– (1, 2, 4, 8, full page) Programmable burst sequence:
Sequential/Interleave 2048 refresh cycles every 32ms (Com, Ind, A1
grade) or 16ms (A2 grade) Random column address every clock cycle Programmable CAS latency (2, 3 clocks) Burst read/write and burst read/single write
operations capability Burst termination by burst stop and
precharge command Byte controlled by LDQM and UDQM Packages: 400-mil 50-pin TSOP-II and 60-ball
TF-BGA Temperature Grades:
Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive A1 (-40oC to +85oC) Automotive A2 (-40oC to +105oC)
DESCRIPTION
ISSI’s 16Mb Synchronous DRAM IS42/4516100H
is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
Copyright © 2023 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. I...
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