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IS43TR16640B Datasheet

Part Number IS43TR16640B
Manufacturers ISSI
Logo ISSI
Description 1Gb DDR3 SDRAM
Datasheet IS43TR16640B DatasheetIS43TR16640B Datasheet (PDF)

IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL).

  IS43TR16640B   IS43TR16640B






Part Number IS43TR16640ED
Manufacturers ISSI
Logo ISSI
Description 1Gb DDR3 SDRAM
Datasheet IS43TR16640B DatasheetIS43TR16640ED Datasheet (PDF)

IS43/46TR16640ED IS43/46TR81280ED 128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL.

  IS43TR16640B   IS43TR16640B







Part Number IS43TR16640BL
Manufacturers ISSI
Logo ISSI
Description 1Gb DDR3 SDRAM
Datasheet IS43TR16640B DatasheetIS43TR16640BL Datasheet (PDF)

IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL).

  IS43TR16640B   IS43TR16640B







1Gb DDR3 SDRAM

IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 NOVEMBER 2014  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C  Partial Array Self Refresh  Asynchronous RESET pin  TDQS (Termination Data Strobe) supported (x8 only)  OCD (Off-Chip Driver Impedance Adjustment)  Dynamic ODT (On-Die Termination)  Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )  Write Leveling  Operating temperature: Commercial (TC = 0°C to +95°C) Industrial (TC = -40°C to +95°C) Automotive, A1 (TC = -40°C to +95°C) Automotive, A2 (TC = -40°C to +105°C) ADDRESS TABLE Parameter Row Addressing Column Addressing Bank Addressing Page size Auto Precharge Addressing BL switch on the fly 128Mx8 A0-A13 A0-A9 B.


2016-08-01 : ZKB465-501-80    T60404-A4655-X001    74LS256    74LS256    54LS256    54LS256    74LS256    SN74LS256    A44    A44   


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