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IS43LR32200B Datasheet

Part Number IS43LR32200B
Manufacturers ISSI
Logo ISSI
Description 512K x 32Bits x 4Banks Mobile DDR SDRAM
Datasheet IS43LR32200B DatasheetIS43LR32200B Datasheet (PDF)

IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at t.

  IS43LR32200B   IS43LR32200B






Part Number IS43LR32200C
Manufacturers ISSI
Logo ISSI
Description 512K x 32Bits x 4Banks Mobile DDR SDRAM
Datasheet IS43LR32200B DatasheetIS43LR32200C Datasheet (PDF)

IS43/46LR32200C 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200C is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at t.

  IS43LR32200B   IS43LR32200B







512K x 32Bits x 4Banks Mobile DDR SDRAM

IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK) • All inputs except data & DM are sampled at the rising edge of the system clock • Data I/O transaction on both edges of data strobe • Bidirectional data strobe per byte of data (DQS) • DM for write masking only • Edge aligned data & data strobe output • Center aligned data & data strobe input • 64ms refresh period (4K cycle) • Auto & self refresh • Concurrent Auto Precharge • Maximum clock frequency up to 166MHZ • Maxim.


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