IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 26...
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits
CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output
voltage levels are compatible with LV
CMOS.
Features
JEDEC standard 3.3V, 2.5V, 1.8V power supply. Auto refresh and self refresh. All pins are compatible with LV
CMOS interface. 8K refresh cycle / 64ms. Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM. Internal 4 banks operation. Burst Read Single Write operation. Special Function Support.
- PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge.
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its prod...