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IS42S16100H Datasheet

Part Number IS42S16100H
Manufacturers ISSI
Logo ISSI
Description 16Mb SYNCHRONOUS DYNAMIC RAM
Datasheet IS42S16100H DatasheetIS42S16100H Datasheet (PDF)

IS42S16100H IS45S16100H ® Long-term Support World Class Quality 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JULY 2023 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Seq.

  IS42S16100H   IS42S16100H






Part Number IS42S16100F
Manufacturers ISSI
Logo ISSI
Description 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
Datasheet IS42S16100H DatasheetIS42S16100F Datasheet (PDF)

IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V • LVTTL interface • Programmable burst length.

  IS42S16100H   IS42S16100H







Part Number IS42S16100E
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
Datasheet IS42S16100H DatasheetIS42S16100E Datasheet (PDF)

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refre.

  IS42S16100H   IS42S16100H







Part Number IS42S16100C1
Manufacturers ISSI
Logo ISSI
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet IS42S16100H DatasheetIS42S16100C1 Datasheet (PDF)

IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM SEPTEMBER 2009 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refres.

  IS42S16100H   IS42S16100H







Part Number IS42S16100A1
Manufacturers ISSI
Logo ISSI
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet IS42S16100H DatasheetIS42S16100A1 Datasheet (PDF)

IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto refresh, self refresh • 4096 refre.

  IS42S16100H   IS42S16100H







16Mb SYNCHRONOUS DYNAMIC RAM

IS42S16100H IS45S16100H ® Long-term Support World Class Quality 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JULY 2023 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA • Temperature Grades: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive A1 (-40oC to +85oC) Automotive A2 (-40oC to +105oC) DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. Copyright © 2023 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. I.


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