IS42RM32400F

IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features ƒ JEDEC standard 2.5V power supply. Auto refresh and self refresh. All pins are compatible with LVCMOS interface. 4K refresh cycle / 64ms. Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. Programmable CAS Latency : 2,3 clocks. Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength Deep Power Down Mode. All inputs and outputs referenced to the positive edge of the system clock. Data mask function by DQM. Internal 4 banks operation. Burst Read Single Write operation. Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge. Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI a...