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IS41C8200 Datasheet

Part Number IS41C8200
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description 2M x 8 (16-MBIT) DYNAMIC RAM
Datasheet IS41C8200 DatasheetIS41C8200 Datasheet (PDF)

IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com FEATURES ISSI DESCRIPTION ® JUNE 2001 • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,.

  IS41C8200   IS41C8200






Part Number IS41C8205
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description 2M x 8 (16-MBIT) DYNAMIC RAM
Datasheet IS41C8200 DatasheetIS41C8205 Datasheet (PDF)

IS41C8205 IS41LV8205 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE www.datasheet4u.com FEATURES ISSI JUNE, 2001 ® DESCRIPTION The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the IS41C8205 and IS41LV8205 ideally suited for high-bandwidth graphics, digital signal processing, high-performance.

  IS41C8200   IS41C8200







2M x 8 (16-MBIT) DYNAMIC RAM

IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com FEATURES ISSI DESCRIPTION ® JUNE 2001 • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the IS41C8200 and IS41LV8200 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C8200 and IS41LV8200 are packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts. PRODUCT SERIES OVERVIEW Part No. IS41C8200 IS41LV8200 Refresh 2K 2K Voltage 5V ± 10% 3.3V ± 10% KEY TIMING PARAMETERS Parameter RAS Access Time (tRAC) CAS Access Time (tCAC) Column Address Access Time (tAA) EDO Page Mode Cycle Time (tPC) Read/Write Cycle Time (tRC) -50 50 13 25 20 84 -60 60 15 30 25 104 Unit ns ns ns ns ns PIN CONFIGURATION 28 Pin SOJ VCC I/O0 I/O1 I/O2 I/O3 WE RAS NC A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 2.


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