IS39LV040 / IS39LV010 / IS39LV512
4Mbit / 1Mbit / 512 Kbit 3.0 Volt-only CMOS Flash Memory
FEATURES
• Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V
• Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit)
• High Performance Read - 70 ns access time
• Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except
IS39LV512)
• Data# Polling and Toggle Bit Features •.
3.0 Volt-only CMOS Flash Memory
IS39LV040 / IS39LV010 / IS39LV512
4Mbit / 1Mbit / 512 Kbit 3.0 Volt-only CMOS Flash Memory
FEATURES
• Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V
• Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit)
• High Performance Read - 70 ns access time
• Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except
IS39LV512)
• Data# Polling and Toggle Bit Features • Hardware Data Protection
• Automatic Erase and Byte Program - Build-in automatic program verification - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time
• Low Power Consumption - Typical 4 mA active read current - Typical 8 mA program/erase current - Typical 0.1 µA CMOS standby current
• High Product Endurance - 100,000 program/erase cycles per single sector - Minimum 20 years data retention
• Industrial Standard Pin-out and Packaging - 32-.