l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34N...
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications. The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source
Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ ...
