isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤105mΩ ·175℃ Operating Junction Te...
isc P-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤105mΩ ·175℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Audio amplifier applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB OL
PARAMETER
VDSS Drain-Source
Voltage
VALUE UNIT
-55
V
VGS Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
-20
A
IDM Drain Current-Single Pulsed
-60
A
PD
Total Dissipation @TC=25℃
79
W
Tj Tstg
Operating Junction And Storage Temperature -40~175
℃
·THERMAL CHARACTERISTICS
SYMBO L
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
MAX
UNIT
1.9
℃/W
IRLU9343
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isc P-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= -0.25mA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID= -0.25mA
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID=-3.4A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS= -55V; VGS= 0V
VSD
Diode forward
voltage
Is= -14A, VGS = 0V
IRLU9343
MIN MAX UNIT
-55
V
-1.0
V
105
mΩ
±10
μA
-2
μA
-1.2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th...
