IRLU024Z

PD - 95825A AUTOMOTIVE MOSFET IRLR024Z IRLU024Z HEXFET® Power MOSFET D Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 58mΩ ID = 16A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRLR024Z I-Pak IRLU024Z Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 16 11 64 35 0.23 ± 16 Units A W W/°C V mJ A mJ ™ PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) Single Pulse Avalanche Energy Tested Value d IAR EAR TJ TSTG Avalanche Current Ù h 25 25 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resista...