www.DataSheet4U.com
PD - 94177
SMPS MOSFET
IRLR3715 IRLU3715
HEXFET® Power MOSFET
Applications l High Frequency Isol...
www.DataSheet4U.com
PD - 94177
SMPS
MOSFET
IRLR3715 IRLU3715
HEXFET® Power
MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
VDSS
20V
RDS(on) max
14mΩ
ID
54A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche
Voltage and Current
D-Pak IRLR3715
I-Pak IRLU3715
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
Parameter
Drain-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 54 38 210 71 3.8 0.48 -55 to + 175
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– ––– –––
Max.
2.1 110 50
Units
°C/W
Notes through
are on page 10
www.irf.com
1
06/28/01
IRLR/U3715
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown
Voltage ∆V(BR)DSS/∆TJ Breakdown
Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold
Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse ...