isc N-Channel MOSFET Transistor
IRLR120N, IIRLR120N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤185mΩ ·Enhan...
isc N-Channel
MOSFET Transistor
IRLR120N, IIRLR120N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
100
VGS
Gate-Source
Voltage
±16
ID
Drain Current-Continuous
10
IDM
Drain Current-Single Pulsed
35
PD
Total Dissipation @TC=25℃
48
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 3.1 110
UNIT ℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
IRLR120N, IIRLR120N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=250μA
100
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=250μA
1
V
2
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=6A
185 mΩ
IGSS
Gate-Source Leakage Current
VGS= ±16V
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
VSD
Diode forward
voltage
Is=6A, VGS = 0V
±0.1 μA
25
μA
1.3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contai...
