IRLMS5703

PD - 91413E IRLMS5703 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET D 1 6 A D VDSS = -30V RDS(on) = 0.20Ω D 2 5 D G 3 4 S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. T op V iew M icro 6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @- 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -2.3 -1.9 -13 1.7 13 ± 20 5.0 -55 to + 150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter Rθ JA Maximum Junction-to-Ambient „ Min. ––– Typ. ––– Max 75 Units °C/W 4/7/04 ...