PD- 93759B
IRLMS4502
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in ...
PD- 93759B
IRLMS4502
HEXFET® Power
MOSFET
l l l l
Ultra Low On-Resistance P-Channel
MOSFET Surface Mount Available in Tape & Reel
D
1
6
A D
VDSS = -12V
D
2 5
D
G
3
4
S
RDS(on) = 0.042Ω
Top View
Description
These P-Channel
MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power
MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Micro6ä
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source
Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source
Voltage Junction and Storage Temperature Range
Max.
-12 -5.5 -4.4 -44 1.7 1.1 0.013 28 ± 12 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
75
Units
°C/W
www.irf.com
1
01/13/03
IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless other...