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IRLMS1902

Part Number	IRLMS1902
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Oct 19, 2005
Detailed Description	PD - 91540C IRLMS1902 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Ch...
Datasheet	IRLMS1902 PDF File

Overview

PD - 91540C IRLMS1902 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET D D G 1 6 A D D S VDSS = 20V RDS(on) = 0.
10Ω 2 5 3 4 Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with...

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