l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fa...
l Ultra Low On-Resistance l P-Channel
MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching
G1 S2
Description
These P-Channel
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source
Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
EAS VGS TJ, TSTG
Single Pulse Avalanche Energy Gate-to-Source
Voltage Junction and Storage Temperature Range
PD - 93755D
IRLML6402
HEXFET® Power
MOSFET
VDSS = -20V
3D
...