IRLML2803

l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. G1 S2 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS dv/dt TJ ,TSTG Gate-to-Source Voltage gSingle Pulse Avalanche Energy dPeak diode Recovery dv/dt Junction and Storage Temperature Range Thermal Resistance Parameter fRθJA Maximum Junction-to-Ambient www.irf.com PD - 91258F IRLML2803 HEXFET® Power MOSFET VDSS = 30V 3D RDS(on) = 0.2...