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IRLI540NPbF

Power MOSFET

Description

 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRLI540NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 100V 0.044 23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...

Infineon

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