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IRL520NL Datasheet

Part Number IRL520NL
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRL520NL DatasheetIRL520NL Datasheet (PDF)

  IRL520NL   IRL520NL
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±16 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 10 7.1 A IDM Drain Current-Single Pulsed 35 A PD Total Dissipation @TC=25℃ 48 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.1 ℃/W IRL520NL isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;.






Part Number IRL520NL
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520NL DatasheetIRL520NL Datasheet (PDF)

  IRL520NL   IRL520NL
www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applica.






N-Channel MOSFET

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±16 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 10 7.1 A IDM Drain Current-Single Pulsed 35 A PD Total Dissipation @TC=25℃ 48 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.1 ℃/W IRL520NL isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±16V;VDS= 0V Drain-Source Leakage Current VDS=100V; VGS= 0V;Tj=25℃ VDS=80V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=6.0A, VGS = 0 V IRL520NL MIN TYP MAX UNIT 100 V 1.0 2.0 V 180 mΩ ±0.1 μA 25 250 μA 1.3 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without no.



2020-10-31 : IRFU4105    IRFSL7787    IRFSL7762    IRFU5410    IRFU9024N    IRFZ45    IRFZ48    IRKD56-14    IRL520NL    IRL530NL   


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