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IRL520N Datasheet

Part Number IRL520N
Manufacturers IRF
Logo IRF
Description HEXFET Power MOSFET
Datasheet IRL520N DatasheetIRL520N Datasheet (PDF)

  IRL520N   IRL520N
PD - 91494A IRL520N HEXFET® l l l l l l Power MOSFET VDSS = 100V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S RDS(on) = 0.18Ω ID = 10A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C.






Part Number IRL520N
Manufacturers INCHANGE
Logo INCHANGE
Description TO-220C N-Channel MOSFET
Datasheet IRL520N DatasheetIRL520N Datasheet (PDF)

  IRL520N   IRL520N
isc N-Channel MOSFET Transistor IRL520N,IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 48 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERIS.






Part Number IRL520N
Manufacturers INCHANGE
Logo INCHANGE
Description TO-220F N-Channel MOSFET
Datasheet IRL520N DatasheetIRL520N Datasheet (PDF)

  IRL520N   IRL520N
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 8.1 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt.






HEXFET Power MOSFET

PD - 91494A IRL520N HEXFET® l l l l l l Power MOSFET VDSS = 100V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S RDS(on) = 0.18Ω ID = 10A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 10 7.1 35 48 0.32 ± 16 85 6.0 4.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 .



2005-07-06 : P8216    P8216    D8224    D8224    UPD41464    2N5546    2N5546    XR210    XR2100    XR2103   


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