IRL520L Datasheet
Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
12 3.0 7.1 Single
I2PAK (TO-262)
D
0.27
DS G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL5.
Part Number |
IRL520S |
Manufacturers |
International Rectifier |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL520S Datasheet (PDF) |
.
Part Number |
IRL520S |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL520S Datasheet (PDF) |
$GYDQFHG 3RZHU 026)(7
IRL520S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * .
Lead-Free
PD- 95592
IRL520NSPbF IRL520NLPbF
www.irf.com
1 07/21/04
IR520NS/LPbF
2 www.irf.com
IRL520NS/LPbF
www.irf.com
3
IR520NS/LPbF
4 www.irf.com
IRL520NS/LPbF
www.irf.com
5
IR520NS/LPbF
6 www.irf.com
IRL520NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
- -+
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ -
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W. Period
VGS=10V
D.U.T. ISD Waveform
Reverse Recovery Current
Body Diode Forwa.
Isc N-Channel MOSFET Transistor
IRL520NS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±16
10 7.1
35
PD
Total Dissipation @TC=25℃
48
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Chan.
Part Number |
IRL520NS |
Manufacturers |
International Rectifier |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL520NS Datasheet (PDF) |
www.DataSheet4U.com
PD - 91534
IRL520NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.18Ω
G
ID = 10A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applica.
Power MOSFET
Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
12 3.0 7.1 Single
I2PAK (TO-262)
D
0.27
DS G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL520L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 5 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature .
2015-11-21 : FD5JS3 FD6JK3 FD8JS3 HDSP-U213 C5886 HDSP-U211 TSP12N60M TSF12N60M OSP12N60C OSF12N60C