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IRL520L Datasheet

Part Number IRL520L
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRL520L DatasheetIRL520L Datasheet (PDF)

  IRL520L   IRL520L
Power MOSFET IRL520L, SiHL520L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 12 3.0 7.1 Single I2PAK (TO-262) D 0.27 DS G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL5.






Part Number IRL520S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520L DatasheetIRL520S Datasheet (PDF)

  IRL520L   IRL520L
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Part Number IRL520S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRL520L DatasheetIRL520S Datasheet (PDF)

  IRL520L   IRL520L
$GYDQFHG 3RZHU 026)(7 IRL520S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * .






Part Number IRL520NSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520L DatasheetIRL520NSPbF Datasheet (PDF)

  IRL520L   IRL520L
• Lead-Free PD- 95592 IRL520NSPbF IRL520NLPbF www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - -+ • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forwa.






Part Number IRL520NS
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRL520L DatasheetIRL520NS Datasheet (PDF)

  IRL520L   IRL520L
Isc N-Channel MOSFET Transistor IRL520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 10 7.1 35 PD Total Dissipation @TC=25℃ 48 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Chan.






Part Number IRL520NS
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520L DatasheetIRL520NS Datasheet (PDF)

  IRL520L   IRL520L
www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applica.






Power MOSFET

Power MOSFET IRL520L, SiHL520L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 12 3.0 7.1 Single I2PAK (TO-262) D 0.27 DS G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL520L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 5 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature .



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