IRL520A Datasheet
Part Number |
IRL520A |
Manufacturers |
Fairchild |
Logo |
|
Description |
Advenced Power MOSFET |
Datasheet |
IRL520A Datasheet (PDF) |
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)
1 2 3
IRL520A
BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (2) (1)
Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 49 0.33 - 55 to +175
Units V A A V mJ A mJ V/ns W W/°C
°C 300
Thermal Resis.
Part Number |
IRL520S |
Manufacturers |
International Rectifier |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL520S Datasheet (PDF) |
.
Part Number |
IRL520S |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL520S Datasheet (PDF) |
$GYDQFHG 3RZHU 026)(7
IRL520S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * .
Lead-Free
PD- 95592
IRL520NSPbF IRL520NLPbF
www.irf.com
1 07/21/04
IR520NS/LPbF
2 www.irf.com
IRL520NS/LPbF
www.irf.com
3
IR520NS/LPbF
4 www.irf.com
IRL520NS/LPbF
www.irf.com
5
IR520NS/LPbF
6 www.irf.com
IRL520NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
- -+
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ -
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W. Period
VGS=10V
D.U.T. ISD Waveform
Reverse Recovery Current
Body Diode Forwa.
Isc N-Channel MOSFET Transistor
IRL520NS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±16
10 7.1
35
PD
Total Dissipation @TC=25℃
48
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Chan.
Part Number |
IRL520NS |
Manufacturers |
International Rectifier |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL520NS Datasheet (PDF) |
www.DataSheet4U.com
PD - 91534
IRL520NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.18Ω
G
ID = 10A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applica.
Advenced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.)
1 2 3
IRL520A
BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (2) (1)
Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 49 0.33 - 55 to +175
Units V A A V mJ A mJ V/ns W W/°C
°C 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.04 -62.5 °C/W Units
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRL520A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Le.
2005-07-06 : P8216 P8216 D8224 D8224 UPD41464 2N5546 2N5546 XR210 XR2100 XR2103