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IRL520A Datasheet

Part Number IRL520A
Manufacturers Fairchild
Logo Fairchild
Description Advenced Power MOSFET
Datasheet IRL520A DatasheetIRL520A Datasheet (PDF)

  IRL520A   IRL520A
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) 1 2 3 IRL520A BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (2) (1) Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 49 0.33 - 55 to +175 Units V A A V mJ A mJ V/ns W W/°C °C 300 Thermal Resis.






Part Number IRL520S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520A DatasheetIRL520S Datasheet (PDF)

  IRL520A   IRL520A
.






Part Number IRL520S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRL520A DatasheetIRL520S Datasheet (PDF)

  IRL520A   IRL520A
$GYDQFHG 3RZHU 026)(7 IRL520S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * .






Part Number IRL520NSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520A DatasheetIRL520NSPbF Datasheet (PDF)

  IRL520A   IRL520A
• Lead-Free PD- 95592 IRL520NSPbF IRL520NLPbF www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - -+ • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forwa.






Part Number IRL520NS
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRL520A DatasheetIRL520NS Datasheet (PDF)

  IRL520A   IRL520A
Isc N-Channel MOSFET Transistor IRL520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 10 7.1 35 PD Total Dissipation @TC=25℃ 48 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Chan.






Part Number IRL520NS
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL520A DatasheetIRL520NS Datasheet (PDF)

  IRL520A   IRL520A
www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applica.






Advenced Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) 1 2 3 IRL520A BVDSS = 100 V RDS(on) = 0.22Ω ID = 9.2 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (2) (1) Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 49 0.33 - 55 to +175 Units V A A V mJ A mJ V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.04 -62.5 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation 1 IRL520A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Le.



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