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IRL510A Datasheet

Part Number IRL510A
Manufacturers Fairchild
Logo Fairchild
Description Advanced Power MOSFET
Datasheet IRL510A DatasheetIRL510A Datasheet (PDF)

  IRL510A   IRL510A
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRL510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175 Units V A A V mJ A mJ V/ns W °C.






Part Number IRL510S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRL510A DatasheetIRL510S Datasheet (PDF)

  IRL510A   IRL510A
www.vishay.com IRL510S, SiHL510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 6.1 2.6 3.3 Single 0.54 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) IRL510SPbF FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note.






Part Number IRL510S
Manufacturers IRF
Logo IRF
Description HEXFET POWER MOSFET
Datasheet IRL510A DatasheetIRL510S Datasheet (PDF)

  IRL510A   IRL510A
.






Part Number IRL510
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRL510A DatasheetIRL510 Datasheet (PDF)

  IRL510A   IRL510A
$GYDQFHG 3RZHU 026)(7 IRL510 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Li.






Part Number IRL510
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRL510A DatasheetIRL510 Datasheet (PDF)

  IRL510A   IRL510A
Power MOSFET IRL510, SiHL510 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 100 VGS = 5.0 V 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single 0.54 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.






Advanced Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRL510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175 Units V A A V mJ A mJ V/ns W °C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 4.1 -62.5 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation 1 IRL510A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , .



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