IRL510A Datasheet
Part Number |
IRL510A |
Manufacturers |
Fairchild |
Logo |
|
Description |
Advanced Power MOSFET |
Datasheet |
IRL510A Datasheet (PDF) |
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)
IRL510A
BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175
Units V A A V mJ A mJ V/ns W °C.
www.vishay.com
IRL510S, SiHL510S
Vishay Siliconix
Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
6.1 2.6 3.3 Single
0.54
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free
Note a. See device orientation
D2PAK (TO-263) IRL510SPbF
FEATURES
• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating • Repetitive avalanche rated
Available
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature
Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note.
.
Part Number |
IRL510 |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL510 Datasheet (PDF) |
$GYDQFHG 3RZHU 026)(7
IRL510
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C) Li.
Part Number |
IRL510 |
Manufacturers |
Vishay Siliconix |
Logo |
|
Description |
Power MOSFET |
Datasheet |
IRL510 Datasheet (PDF) |
Power MOSFET
IRL510, SiHL510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
6.1
Qgs (nC)
2.6
Qgd (nC)
3.3
Configuration
Single
0.54
TO-220AB
D
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.
Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)
IRL510A
BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175
Units V A A V mJ A mJ V/ns W °C
°C 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 4.1 -62.5 °C/W Units
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRL510A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , .
2005-07-06 : P8216 P8216 D8224 D8224 UPD41464 2N5546 2N5546 XR210 XR2100 XR2103