www.DataSheet4U.com
PD 9.1675B
PRELIMINARY
l l l l l
IRL3202S
HEXFET® Power MOSFET
D
Advanced Process Technology Sur...
www.DataSheet4U.com
PD 9.1675B
PRELIMINARY
l l l l l
IRL3202S
HEXFET® Power
MOSFET
D
Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching
VDSS = 20V
G S
RDS(on) = 0.016W ID = 48A
Description
These HEXFET Power
MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Gate-to-Source
Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
48 30 190 69 ...