IRHQ63110 Datasheet
Part Number |
IRHQ63110 |
Manufacturers |
International Rectifier |
Logo |
|
Description |
(IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
Datasheet |
IRHQ63110 Datasheet (PDF) |
www.DataSheet4U.com
PD - 91781B
IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)
™ ®
Product Summary
Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperatur.
(IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
www.DataSheet4U.com
PD - 91781B
IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)
™ ®
Product Summary
Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation L.
2006-12-30 : 6MBI75U2A-060 6MBI75UB-120 6MBP50RTB060 6SD106E 7MBR100SD060 7MBR50UA120 7MBR50UA120 7MBR75SD060 82C836 AN540