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IRHQ54110 Datasheet

Part Number IRHQ54110
Manufacturers International Rectifier
Logo International Rectifier
Description (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Datasheet IRHQ54110 DatasheetIRHQ54110 Datasheet (PDF)

www.DataSheet4U.com PD - 94211A IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A 100V, Quad N-CHANNEL RAD-Hard HEXFET ™ ® 4 # TECHNOLOGY IRHQ58110 1000K Rads (Si) LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This .

  IRHQ54110   IRHQ54110






(IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD - 94211A IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A 100V, Quad N-CHANNEL RAD-Hard HEXFET ™ ® 4 # TECHNOLOGY IRHQ58110 1000K Rads (Si) LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derat.


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